Semicera High PuritySilicon Carbide Paddleyog kev tsim kho meticulously kom tau raws li cov kev xav tau nruj ntawm cov txheej txheem tsim khoom niaj hnub semiconductor. Qhov noSiC Cantilever Paddleexcels nyob rau hauv high-temperature ib puag ncig, muab unparalleled thermal stability thiab mechanical durability. Tus qauv SiC Cantilever yog tsim los tiv thaiv cov xwm txheej huab cua, ua kom ntseeg tau tias kev tuav wafer txhim khu kev qha thoob plaws ntau yam txheej txheem.
Ib tug ntawm cov tseem ceeb innovation ntawm lubSiC Paddleyog nws lub teeb yuag tsis tau robust tsim, uas tso cai rau kom yooj yim kev koom ua ke rau hauv uas twb muaj lawm systems. Nws cov thermal conductivity siab pab tswj wafer stability thaum lub sij hawm tseem ceeb xws li etching thiab deposition, txo qhov kev pheej hmoo ntawm wafer puas thiab ua kom muaj ntau lawm yields. Kev siv cov silicon carbide high-density silicon carbide hauv kev siv paddle txhim kho nws cov kev tiv thaiv rau hnav thiab tsim kua muag, muab kev ua haujlwm ntev ntev thiab txo qhov kev xav tau ntau zaus.
Semicera muab qhov tseem ceeb ntawm kev tsim kho tshiab, xa ibSiC Cantilever Paddleuas tsis yog tsuas yog ua tau raws li tab sis tshaj cov qauv kev lag luam. Cov paddle no tau zoo rau kev siv ntau yam kev siv semiconductor, los ntawm kev tso tawm mus rau etching, qhov tseeb thiab kev ntseeg tau yog qhov tseem ceeb. Los ntawm kev sib koom ua ke nrog cov cuab yeej siv thev naus laus zis no, cov tuam txhab lag luam tuaj yeem cia siab tias yuav txhim kho kev ua haujlwm, txo tus nqi kho, thiab cov khoom zoo ib yam.
| Lub cev muaj zog ntawm Recrystalized Silicon Carbide | |
| Khoom | Tus nqi |
| Ua haujlwm kub (°C) | 1600 ° C (nrog oxygen), 1700 ° C (txo ib puag ncig) |
| SiC cov ntsiab lus | > 99.96% |
| Dawb Si cov ntsiab lus | <0.1% |
| Qhov ntom ntom | 2.60-2.70 g / cm33 |
| Pom tseeb porosity | <16% |
| Compression zog | > 600 MPa |
| Txias dabtsi yog khoov zog | 80-90 MPa (20 ° C) |
| Kub dabtsi yog khoov zog | 90-100 MPa (1400 ° C) |
| Thermal expansion @ 1500 ° C | 4.70 10-6/°C |
| Thermal conductivity @ 1200 ° C | 23 W/m•K |
| Elastic modulus | 240 GPa |
| Thermal shock tsis kam | Zoo heev |
