SiC Pin Trays rau ICP Etching Txheej Txheem hauv LED Kev Lag Luam

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Semicera's SiC Pin Trays rau ICP Etching Txheej Txheem hauv LED Kev Lag Luam yog tsim tshwj xeeb los txhim kho kev ua tau zoo thiab qhov tseeb hauv kev siv etching. Ua los ntawm cov khoom zoo silicon carbide, cov pin tais no muaj kev ruaj ntseg zoo heev, tshuaj lom neeg, thiab lub zog txhua yam. Qhov zoo tshaj plaws rau cov kev xav tau ntawm cov txheej txheem tsim khoom ntawm LED, Semicera's SiC tus pin tais ua kom zoo ib yam etching, txo cov kab mob sib kis, thiab txhim kho tag nrho cov txheej txheem kev ntseeg tau, ua rau cov khoom zoo LED.


Product Detail

Khoom cim npe

Product Description

Peb lub tuam txhab muab SiC txheej txheej txheem kev pab cuam los ntawm CVD txoj kev nyob rau saum npoo ntawm graphite, ceramics thiab lwm yam ntaub ntawv, kom tshwj xeeb gases uas muaj carbon thiab silicon react ntawm kub kom tau siab purity SiC molecules, molecules tso rau saum npoo ntawm cov ntaub ntawv coated, tsim SIC tiv thaiv txheej.

Cov yam ntxwv tseem ceeb:

1. Kub oxidation kuj:

oxidation kuj tseem zoo heev thaum kub siab li 1600 C.

2. High purity: ua los ntawm cov tshuaj vapor deposition nyob rau hauv siab kub chlorination mob.

3. Erosion kuj: siab hardness, compact nto, zoo hais.

4. Corrosion kuj: acid, alkali, ntsev thiab organic reagents.

Silicon carbide etched disk (2)

Main Specifications ntawm CVD-SIC txheej

SiC-CVD Properties

Crystal Structure

FCC β theem

Qhov ntom

g / cm³

3.21

Hardness

Vickers hardness

2500

Loj Loj

ua m

2 ~ 10

Tshuaj Purity

%

99.999 5

Thaum tshav kub kub muaj peev xwm

J·kg-1 · K-1

640

Sublimation kub

2700 ib

Felexural zog

MPa (RT 4-point)

415

Young's Modulus

Gpa (4pt khoov, 1300 ℃)

430

Thermal Expansion (CTE)

10-6K-1

4.5

Thermal conductivity

(W / mK)

300

Semicera Chaw Ua Haujlwm
Semicera chaw ua haujlwm 2
Cov cuab yeej siv tshuab
CNN ua, tshuaj ntxuav, CVD txheej
Peb qhov kev pabcuam

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