SiC pin tais rau ICP etching txheej txheem hauv kev lag luam LED

Lus piav qhia luv luv:

Silicon carbide yog hom tshiab ntawm ceramics nrog cov nqi siab thiab cov khoom siv zoo heev.Vim muaj cov yam ntxwv zoo li lub zog siab thiab hardness, kub tsis kam, thermal conductivity thiab tshuaj corrosion kuj, Silicon Carbide yuav luag txhua yam tshuaj nruab nrab.Yog li ntawd, SiC tau siv dav hauv cov roj mining, tshuaj lom neeg, tshuab thiab airspace, txawm tias lub zog nuclear thiab cov tub rog muaj lawv qhov tshwj xeeb xav tau ntawm SIC.

Peb tuaj yeem tsim thiab tsim khoom raws li koj qhov tshwj xeeb qhov ntev nrog cov khoom zoo thiab tsim nyog lub sijhawm.


Product Detail

Khoom cim npe

Product Description

Peb lub tuam txhab muab SiC txheej txheej txheem kev pab cuam los ntawm CVD txoj kev nyob rau saum npoo ntawm graphite, ceramics thiab lwm yam ntaub ntawv, kom tshwj xeeb gases uas muaj carbon thiab silicon react ntawm kub kom tau siab purity SiC molecules, molecules tso rau saum npoo ntawm cov ntaub ntawv coated, tsim SIC tiv thaiv txheej.

Cov yam ntxwv tseem ceeb:

1. Kub kub oxidation tsis kam:

oxidation kuj tseem zoo heev thaum kub siab li 1600 C.

2. High purity: ua los ntawm cov tshuaj vapor deposition nyob rau hauv siab kub chlorination mob.

3. Erosion kuj: siab hardness, compact nto, zoo hais.

4. Corrosion kuj: acid, alkali, ntsev thiab organic reagents.

Silicon carbide etched disk (2)

Main Specifications ntawm CVD-SIC txheej

SiC-CVD Properties

Crystal Structure

FCC β theem

Qhov ntom

g / cm³

3.21

Hardness

Vickers hardness

2500

Loj Loj

ua m

2 ~ 10

Tshuaj Purity

%

99.999 5

Thaum tshav kub kub muaj peev xwm

J·kg-1 · K-1

640

Sublimation kub

2700

Felexural zog

MPa (RT 4-point)

415

Young's Modulus

Gpa (4pt khoov, 1300 ℃)

430

Thermal Expansion (CTE)

10-6K-1

4.5

Thermal conductivity

(W / mK)

300

Semicera Chaw Ua Haujlwm
Semicera chaw ua haujlwm 2
Cov cuab yeej siv tshuab
CNN ua, tshuaj ntxuav, CVD txheej
Peb qhov kev pabcuam

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