Semicera covSiC paddlesyog engineered rau tsawg thermal expansion, muab kev ruaj ntseg thiab precision nyob rau hauv cov txheej txheem uas qhov tseeb dimension yog ib qho tseem ceeb. Qhov no ua rau lawv zoo tagnrho rau kev siv qhov twgwafersraug rov ua cua sov thiab cua txias, raws li lub nkoj wafer tswj nws cov qauv kev ncaj ncees, ua kom muaj kev ua tau zoo ib yam.
Incorporating Semicera'ssilicon carbide diffusion paddlesrau hauv koj cov kab ntau lawm yuav txhim khu koj cov txheej txheem kev ntseeg tau, ua tsaug rau lawv superior thermal thiab tshuaj zog. Cov paddles no zoo meej rau diffusion, oxidation, thiab cov txheej txheem annealing, kom ntseeg tau tias wafers raug saib xyuas thiab ua kom raug thoob plaws txhua kauj ruam.
Innovation yog lub hauv paus ntawm Semicera'sSiC paddletsim. Cov paddles no tau tsim kom haum seamlessly rau hauv cov khoom siv semiconductor uas twb muaj lawm, muab kev txhim kho kev ua haujlwm zoo. Lub teeb yuag thiab ergonomic tsim tsis tsuas yog txhim kho kev thauj mus los ntawm wafer tab sis kuj txo qis kev ua haujlwm, uas ua rau muaj kev ua haujlwm zoo.
| Lub cev muaj zog ntawm Recrystalized Silicon Carbide | |
| Khoom | Tus nqi |
| Ua haujlwm kub (°C) | 1600 ° C (nrog oxygen), 1700 ° C (txo ib puag ncig) |
| SiC cov ntsiab lus | > 99.96% |
| Dawb Si cov ntsiab lus | <0.1% |
| Qhov ntom ntom | 2.60-2.70 g / cm33 |
| Pom tseeb porosity | <16% |
| Compression zog | > 600 MPa |
| Txias dabtsi yog khoov zog | 80-90 MPa (20 ° C) |
| Kub dabtsi yog khoov zog | 90-100 MPa (1400 ° C) |
| Thermal expansion @ 1500 ° C | 4.70 10-6/°C |
| Thermal conductivity @ 1200 ° C | 23 W/m•K |
| Elastic modulus | 240 GPa |
| Thermal shock tsis kam | Zoo heev |
