Silicon raws li GaN epitaxy

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Semicera Energy Technology Co., Ltd. yog ib tug ua lag luam ntawm advanced semiconductor ceramics thiab tsuas yog cov chaw tsim tshuaj paus nyob rau hauv Suav teb uas muaj peev xwm ib txhij muab high-purity silicon carbide ceramics (tshwj xeeb tshaj yog covRecrystalized SiC) thiab CVD SiC txheej. Tsis tas li ntawd, peb lub tuam txhab kuj tau cog lus rau cov teb ceramic xws li alumina, aluminium nitride, zirconia, thiab silicon nitride, thiab lwm yam.

 

Product Detail

Khoom cim npe

Product Description

Peb lub tuam txhab muabSiC txheejtxheej txheem kev pab cuam los ntawm CVD txoj kev nyob rau saum npoo ntawm graphite, ceramics thiab lwm yam ntaub ntawv, thiaj li hais tias tshwj xeeb gases uas muaj carbon thiab silicon react nyob rau hauv high kub kom tau siab purity SiC molecules, molecules tso rau saum npoo ntawm cov ntaub ntawv coated, tsim.SIC tiv thaiv txheej.

Cov yam ntxwv tseem ceeb:

1. Kub oxidation kuj:

oxidation kuj tseem zoo heev thaum kub siab li 1600 C.

2. High purity: ua los ntawm cov tshuaj vapor deposition nyob rau hauv siab kub chlorination mob.

3. Erosion kuj: siab hardness, compact nto, zoo hais.

4. Corrosion kuj: acid, alkali, ntsev thiab organic reagents.

 

Main Specifications ntawm CVD-SIC txheej

SiC-CVD Properties

Crystal Structure

FCC β theem

Qhov ntom

g / cm³

3.21

Hardness

Vickers hardness

2500

Loj Loj

ib m

2 ~ 10

Tshuaj Purity

%

99.999 5

Thaum tshav kub kub muaj peev xwm

J·kg-1 · K-1

640

Sublimation kub

2700 ib

Felexural zog

MPa (RT 4-point)

415

Young's Modulus

Gpa (4pt khoov, 1300 ℃)

430

Thermal Expansion (CTE)

10-6K-1

4.5

Thermal conductivity

(W / mK)

300

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17
211
Semicera Chaw Ua Haujlwm
Semicera chaw ua haujlwm 2
Cov cuab yeej siv tshuab
CNN ua, tshuaj ntxuav, CVD txheej
Peb qhov kev pabcuam

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