Semiconductor Silicon raws li GaN epitaxy

Lus piav qhia luv luv:

Semicera Energy Technology Co., Ltd. yog ib tug ua lag luam ntawm advanced semiconductor ceramics thiab tib lub chaw tsim tshuaj paus nyob rau hauv Suav teb uas muaj peev xwm ib txhij muab high-purity silicon carbide ceramic (tshwj xeeb tshaj yog cov Recrystallized SiC) thiab CVD SiC txheej.Tsis tas li ntawd, peb lub tuam txhab kuj tau cog lus rau cov teb ceramic xws li alumina, aluminium nitride, zirconia, thiab silicon nitride, thiab lwm yam.

 

Product Detail

Khoom cim npe

Silicon-based GaN epitaxy

Product Description

Peb lub tuam txhab muab SiC txheej txheej txheem kev pab cuam los ntawm CVD txoj kev nyob rau saum npoo ntawm graphite, ceramics thiab lwm yam ntaub ntawv, kom tshwj xeeb gases uas muaj carbon thiab silicon react ntawm kub kom tau siab purity SiC molecules, molecules tso rau saum npoo ntawm cov ntaub ntawv coated, tsim SIC tiv thaiv txheej.

Cov yam ntxwv tseem ceeb:

1. Kub kub oxidation tsis kam:

oxidation kuj tseem zoo heev thaum kub siab li 1600 C.

2. High purity: ua los ntawm cov tshuaj vapor deposition nyob rau hauv siab kub chlorination mob.

3. Erosion kuj: siab hardness, compact nto, zoo hais.

4. Corrosion kuj: acid, alkali, ntsev thiab organic reagents.

Main Specifications ntawm CVD-SIC txheej

SiC-CVD Properties

Crystal Structure

FCC β theem

Qhov ntom

g / cm³

3.21

Hardness

Vickers hardness

2500

Loj Loj

ua m

2 ~ 10

Tshuaj Purity

%

99.999 5

Thaum tshav kub kub muaj peev xwm

J·kg-1 · K-1

640

Sublimation kub

2700

Felexural zog

MPa (RT 4-point)

415

Young's Modulus

Gpa (4pt khoov, 1300 ℃)

430

Thermal Expansion (CTE)

10-6K-1

4.5

Thermal conductivity

(W / mK)

300

Semicera Chaw Ua Haujlwm
Semicera chaw ua haujlwm 2
Cov cuab yeej siv tshuab
CNN ua, tshuaj ntxuav, CVD txheej
Peb qhov kev pabcuam

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