Graphite Suscepctor nrog Silicon Carbide Txheej, chim tais

Lus piav qhia luv luv:

Semicera muaj ntau yam ntawm susceptors thiab graphite Cheebtsam tsim rau ntau yam epitaxy reactors.

Los ntawm kev koom tes nrog kev koom tes nrog kev lag luam ua lag luam OEMs, kev paub txog cov ntaub ntawv dav dav, thiab cov peev txheej tsim khoom siab heev, Semicera muab cov qauv tsim kom tau raws li qhov tshwj xeeb ntawm koj daim ntawv thov.Peb qhov kev cog lus rau kev ua tau zoo ua kom ntseeg tau tias koj tau txais cov kev daws teeb meem zoo rau koj cov kev xav tau ntawm epitaxy reactor.

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Product Detail

Khoom cim npe

Kev piav qhia

Peb lub tuam txhab muab SiC txheej txheej txheem kev pab cuam los ntawm CVD txoj kev nyob rau saum npoo ntawm graphite, ceramics thiab lwm yam ntaub ntawv, kom tshwj xeeb gases uas muaj carbon thiab silicon react ntawm kub kom tau siab purity SiC molecules, molecules tso rau saum npoo ntawm cov ntaub ntawv coated, tsim SIC tiv thaiv txheej.

txog (1)

txog (2)

Lub ntsiab nta

1.High purity SiC coated graphite

2. Superior tshav kub tsis kam & thermal uniformity

3. Zoo SiC siv lead ua coated rau ib tug du nto

4. High durability tiv thaiv tshuaj ntxuav

Main Specifications ntawm CVD-SIC txheej

SiC-CVD Properties
Crystal Structure	FCC β theem
Qhov ntom	g / cm³	3.21
Hardness	Vickers hardness	2500
Loj Loj	ua m	2 ~ 10
Tshuaj Purity	%	99.999 5
Thaum tshav kub kub muaj peev xwm	J·kg-1 · K-1	640
Sublimation kub	℃	2700
Felexural zog	MPa (RT 4-point)	415
Young's Modulus	Gpa (4pt khoov, 1300 ℃)	430
Thermal Expansion (CTE)	10-6K-1	4.5
Thermal conductivity	(W / mK)	300